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| G M B TA 6 4 Description Features & D.C. Current Gain High 1/2 PNP SILICON TRANSISTOR The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. &For Complementary with NPN Type GMBTA14 Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -30 -30 -10 -500 225 V V V mA mW Unit Characteristics Symbol at Ta = 25 : Min. Typ. Max. Unit Test Conditions BVCBO BVCES BVEBO ICBO IEBO VCE(sat) VBE(on) HFE1 HFE2 fT -30 -30 -10 10K 20K 125 - -100 -100 -1.5 -2 - V V V nA nA V V IC=-100uA , IE=0 IC=-100uA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VCE=-10V IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA VCE=-5V, IC=-10mA VCE=-5V, IC=-100mA MHz VCE=-5V, IC=-100mA, f=100MHz *Pulse Test :Pulse width 380us,Duty Cycly 2% 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 |
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